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Si7460DP
Vishay Siliconix
N-Channel 60-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
60
R DS(on) ( Ω )
0.0096 at V GS = 10 V
0.012 at V GS = 4.5 V
I D (A)
18
16
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFETs
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
PowerPAK SO-8
6.15 mm
1
S
S
5.15 mm
2
3
S
G
D
4
D
8
7
D
D
6
5
D
G
Bottom V ie w
Ordering Information: Si7460DP-T1-E3 (Lead (Pb)-free)
Si7460DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
60
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Avalanche Current
Avalanche Energy
T A = 25 °C
T A = 70 °C
I D
I DM
I S
I AS
E AS
18
14
4.3
40
50
125
11
8
1.6
A
mJ
Maximum Power Dissipation
a
T A = 25 °C
T A = 70 °C
P D
5.4
3.4
1.9
1.2
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b,c
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
Steady State
R thJA
18
52
23
65
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R thJC
1.0
1.3
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72126
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
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